6N Silicon Carbide - Nitrogen free

Silicon Carbide has become the new frontier in the electronics industry thanks to its speed, high temperature and voltage tolerance in semiconductor applications.

Our ultra high purity Silica is combined with Graphite in an innovative and proprietary process that allows the creation of Silicon Carbide (SiC) powder of ultra high purity (6N) and Nitrogen free. This is ideal for crystal growth applications and SiC based wafer production.

About us

We are a group of very experienced scientists and researchers that have spent jointly more than half a century working in the fields of inorganic chemistry and semiconductor crystal growth. After more than six years of research and development, we have found a breakthrough in the production of ultra high purity Silicon Carbide based materials and can customize the nano characteristics of the molecules to fit the most advanced applications. Contact us to learn more about our products and how we may partner with you.